Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

@inproceedings{Faria2012UltralowRO,
  title={Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy},
  author={Faiza Afroz Faria and Jia Guo and Pei Zhao and Guowang Li and Prem Kumar Kandaswamy and Mark A. Wistey and Huili Grace Xing and Debdeep Jena},
  year={2012}
}
(Received 13 April 2012; accepted 9 July 2012; published online 20 July 2012) Ti/Al/Ni/Au ohmic contacts were formed on heavily doped nþ metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (RC) and sheet resistance (Rsh) as a function of corresponding GaN free carrier concentration (n) were measured. Very low RC values (<0.09 X mm) were obtained, with a minimum RC of 0.035 X mm on a sample with a room temperature carrier… CONTINUE READING

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