Ultra-low-power SiGe HBT technology for wide-range microwave applications


Ultra-low power SiGe HBT was developed for wide-range microwave applications. The key technologies of the SiGe HBT are based on well-controlled SiGe / Si epitaxial growth techniques with low-temperature chemical vapor deposition (CVD), which give several important features of the low-power SiGe HBT. The prominent features are a robustly designed n<sup… (More)

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