Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET

  title={Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET},
  author={C. N. Ni and Xuebin Li and Shashank Sharma and K. Venkateshwara Rao and Miao Jin and Christopher Lazik and Vik Banthia and Benjamin Colombeau and Naushad Variam and Abhilash J. Mayur and Hua Chung and Raymond Hung and Adam Brand},
  journal={2015 Symposium on VLSI Technology (VLSI Technology)},
We report a record setting low NMOS contact Rc of 2e-9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e-9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity with HD Si:P using P implantation followed by laser anneal to reach the contact resistivity… CONTINUE READING

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