Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET

@article{Ni2015UltralowCR,
  title={Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET},
  author={C. N. Ni and Xuebin Li and Shashank Sharma and K. Venkateshwara Rao and Miao Jin and Christopher Lazik and Vik Banthia and Benjamin Colombeau and Naushad Variam and Abhilash J. Mayur and Hua Chung and Raymond Hung and Adam Brand},
  journal={2015 Symposium on VLSI Technology (VLSI Technology)},
  year={2015},
  pages={T118-T119}
}
We report a record setting low NMOS contact Rc of 2e-9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e-9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity with HD Si:P using P implantation followed by laser anneal to reach the contact resistivity… CONTINUE READING

From This Paper

Figures, tables, and topics from this paper.

Citations

Publications citing this paper.
Showing 1-10 of 10 extracted citations

1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

2015 IEEE International Electron Devices Meeting (IEDM) • 2015
View 4 Excerpts
Highly Influenced

Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon

IEEE Electron Device Letters • 2017
View 1 Excerpt

Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

2017 IEEE International Interconnect Technology Conference (IITC) • 2017
View 3 Excerpts

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

2016 16th International Workshop on Junction Technology (IWJT) • 2016

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

2016 16th International Workshop on Junction Technology (IWJT) • 2016
View 1 Excerpt

Similar Papers

Loading similar papers…