Ultra-high Q.f product laterally-coupled AlN/silicon and AlN/sapphire High Overtone Bulk Acoustic wave Resonators

@article{Reinhardt2013UltrahighQP,
  title={Ultra-high Q.f product laterally-coupled AlN/silicon and AlN/sapphire High Overtone Bulk Acoustic wave Resonators},
  author={Alexandre Reinhardt and M. T. Delaye and Julie Abergel and Veronika Kovacova and Marjolaine Allain and L. Andreutti and Denis Mercier and Jeremy Georges and F. Tomaso and P. P. Lassagne and Emmanuel Defay and N. Chretien and T. Baron and Gilles Martin and E. Lebrasseur and S. Ballandras and L. Chommeloux and J. M. Lesage},
  journal={2013 IEEE International Ultrasonics Symposium (IUS)},
  year={2013},
  pages={1922-1925}
}
We investigate the use of laterally-coupled High Overtone Bulk Acoustic Resonators (HBAR) based on AlN thin films sputtered on silicon and sapphire substrates in order to target an operation frequency between 2 and 5 GHz. Being tightly coupled, they generate an extremely narrow bandwidth, assimilated to a single resonance whose unloaded quality factors reach respectively 3,300 and 2,000 at 2.5 and 4.4 GHz on silicon substrates and 25,000 at both frequencies on sapphire substrates. The later… CONTINUE READING
Highly Cited
This paper has 18 citations. REVIEW CITATIONS