Ultra-doped n-type germanium thin films for sensing in the mid-infrared

Abstract

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 10(20) cm(-3) and carrier mobilities above 260 cm(2)/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm(-1), which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

DOI: 10.1038/srep27643

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@inproceedings{Prucnal2016UltradopedNG, title={Ultra-doped n-type germanium thin films for sensing in the mid-infrared}, author={Slawomir Prucnal and Fang Liu and Matthias Voelskow and L. Vines and L. Rebohle and Denny Lang and Yonder Berenc{\'e}n and Stefan Andric and Roman Boettger and M. Helm and Shengqiang Zhou and W. Skorupa}, booktitle={Scientific reports}, year={2016} }