Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications

Abstract

This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/electronic warfare/communication applications targeting the frequency range from 6 to 18 GHz. The reported chip set consists of a driver amplifier (DA) MMIC and an HPA MMIC on a high-power gallium-nitride process with high electronic-mobility transistors. The DA reaches a power gain of 11 dB and maximum output power of 2 W, which is sufficient to drive a final stage in a balanced configuration. The HPA reaches a typical output power of 12.5 and 10.6 W in pulsed and continuous wave (CW) operation, respectively. Measurements on the module level indicate 18.5-W typical output power in both pulsed and CW operation.

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Cite this paper

@article{Schmid2013UltraWidebandGM, title={Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications}, author={Ulf Schmid and Hardy Sledzik and Patrick Schuh and J. Schroth and Martin Oppermann and Peter Bruckner and Friedbert van Raay and Rudiger Quay and Matthias Seelmann-Eggebert}, journal={IEEE Transactions on Microwave Theory and Techniques}, year={2013}, volume={61}, pages={3043-3051} }