Ultra-Thin SOI CMOS Using Laser Spike Anneal


We have investigated the impact of laser spike anneal (LSA) on the performance of ultra-thin SOI MOSFETs. LSA was found to significantly reduce the parasitic external resistance in UTSOI devices. Reduced external resistance in conjunction with improved gate activation resulted in a substantial improvement in nFET performance. A conventional spike RTA… (More)


5 Figures and Tables

Cite this paper

@article{Ren2006UltraThinSC, title={Ultra-Thin SOI CMOS Using Laser Spike Anneal}, author={Z. Ren and Jeffrey W. Sleight and J. M. Hergenrother and D. V. Singh and Oleg Gluschenkov and Omer H. Dokumaci and L. A. Black and J. Pan and K. L. Lee and J{\"u}rg Ott and Paul M Ronsheim and Jaeick Lee and Wolfgang Haensch and Michael H Ieong and C. Y. Sung}, journal={2006 International Symposium on VLSI Technology, Systems, and Applications}, year={2006}, pages={1-2} }