Ubiquitous Relaxation in Bti Stressing—new Evaluation and Insights

Abstract

The ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions. A technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the otherwise-unknown relaxation component. The properties of relaxation are discussed in detail for pFET with SiON dielectric subjected to NBTI stress. Based on similarities with dielectric relaxation, a physical picture and an equivalent circuit are proposed.

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@inproceedings{Kaczer2008UbiquitousRI, title={Ubiquitous Relaxation in Bti Stressing—new Evaluation and Insights}, author={Ben Kaczer and Tibor Grasser and Ph. J. Roussel and Javier Mart{\'i}n-Mart{\'i}nez and R. O’Connor and Brendan John O’Sullivan and Guido Groeseneken}, year={2008} }