UTBB/FDSOI: Reasons for a success

  • Marine Haond
  • Published 2014 in
    2014 SOI-3D-Subthreshold Microelectronics…

Abstract

We have presented the reasons of a success story for the 2D FDSOI Technology that has started at 28 nm and will continue through the 10 nm node. Competitive performance and power control is demonstrated. It is also experiencing the use of Back Biasing both for performance boost as well as for adequate Process compensation allowing reaching a tighter process… (More)

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