UNCLASSIFIED Defense Technical Information Center Compilation

Abstract

GaAs Schottky diode proved itself to be one the All that leads to significant improvements in main semiconductor device used in THz-electronics. This performance, which were shown from RF-measurements contribution describes the evolution of THz-devices from for frequency multipliers and mixers using substrateless honey-comb whisker-contacted Schottky diodes… (More)

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Cite this paper

@inproceedings{LinUNCLASSIFIEDDT, title={UNCLASSIFIED Defense Technical Information Center Compilation}, author={Chih-I Lin and V. Ichizli and Manuel Rodriguez-Girons and M. Saglam and Pawel Szeliga and Hans L. Hartnagel} }