Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m Wavelength Range


Type-I quantum-well (QW) diode lasers based on AlInGaAsSb-InGaAsSb-AlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 &#x003BC;m correspondingly were demonstrated. Experiment shows… (More)


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