Twofold co-ordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2.

@article{Alessi2008TwofoldCG,
  title={Twofold co-ordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2.},
  author={A. Alessi and Simonpietro Agnello and Franco Mario Gelardi and Samuele Grandi and Aldo Magistris and Roberto Boscaino},
  journal={Optics express},
  year={2008},
  volume={16 7},
  pages={4895-900}
}
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical… CONTINUE READING