Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

@inproceedings{Vu2016TwoterminalFM,
  title={Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio},
  author={Quoc An Vu and Yong Seon Shin and Young Rae Kim and Van Luan Nguyen and Won Tae Kang and Hyun Woo Kim and Dinh Hoa Luong and Il Min Lee and Kiyoung Lee and Dong-Su Ko and Jinseong Heo and Seongjun Park and Young Hee Lee and Woo Jong Yu},
  booktitle={Nature communications},
  year={2016}
}
Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously… CONTINUE READING
Recent Discussions
This paper has been referenced on Twitter 2 times over the past 90 days. VIEW TWEETS

From This Paper

Topics from this paper.

References

Publications referenced by this paper.
Showing 1-10 of 37 references

Similar Papers

Loading similar papers…