Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors

@inproceedings{Hu2009TwodimensionalTS,
  title={Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors},
  author={Weida Hu and Xufeng Chen and F. Yin and J. B. Zhang and Wen Jiang Lu},
  year={2009}
}
  • Weida Hu, Xufeng Chen, +2 authors Wen Jiang Lu
  • Published 2009
  • Physics
  • The intrinsic mechanisms of drain lag and current collapse in GaN-based high-electron-mobility transistors are studied by using two-dimensional numerical simulations. Simulated drain lag characteristics are in good agreement with reported experimental data. The dynamic pictures of trapping of hot electrons under drain-pulse voltages are discussed in detail. Hot-electron buffer-trapping effect plays an instrumental role in the current collapse mechanism. Polarization-induced interface charges… CONTINUE READING

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