Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS-EDX spectroscopy.

Abstract

Field emission gun (FEG) nanoprobe scanning electron transmission microscopy (STEM) techniques coupled with energy dispersive X-ray (EDX) and electron energy loss spectroscopy (EELS) are evaluated for the detection of the n-type dopant arsenic, in silicon semiconductor devices with nanometer-scale. Optimization of the experimental procedure, data extraction… (More)
DOI: 10.1016/j.micron.2009.04.003

Topics

  • Presentations referencing similar topics