Two-dimensional process simulation using verified phenomenological models

Abstract

Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. Existing process simulators cannot accurately model some of these effects. We describe a 2-D process simulator PREDICT2 that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of… (More)
DOI: 10.1109/43.79501

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