Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms

@inproceedings{Zogg2003TwodimensionalML,
  title={Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms},
  author={Hans Zogg and Karim Alchalabi and Dmitri Zimin and Klaus Kellermann},
  year={2003}
}
  • Hans Zogg, Karim Alchalabi, +1 author Klaus Kellermann
  • Published 2003
  • Physics
  • A two-dimensional narrow-gap infrared (IR) focal plane array on an Si substrate where the Si substrate contains the active addressing electronics is described. The array consists of 96 /spl times/ 128 pixels with 75-/spl mu/m pitch and is fabricated in a lead-chalcogenide layer grown epitaxially on the Si read-out chip. The cut-off wavelength is 5.5 /spl mu/m. Each pixel contains a bare Si area, onto which epitaxial growth occurs, and an access transistor. The Si-chips are fabricated in CMOS… CONTINUE READING

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