Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

@inproceedings{Ambacher2000TwoDE,
  title={Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures},
  author={Oliver Ambacher and Brian Foutz and Joseph A. Smart and James Richard Shealy and Nils G. Weimann and Kenneth Chu and Michael E. Murphy and Andrej J. Sierakowski and William J. Schaff and Lester F. Eastman and Roumen Dimitrov and Aaron L. Mitchell and Martin Stutzmann},
  year={2000}
}
Two dimensional electron gases in Al x Ga 12x N/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical… CONTINUE READING

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