Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast

  title={Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast},
  author={Marco Buzzo and Mauro Ciappa and Maria Stangoni and Wolfgang Fichtner},
  journal={Microelectronics Reliability},
Recent publications reported a surprisingly intensive dopant contrast arising in Secondary Electron SEM images of Silicon Carbide devices. This work gives an insight into the physics of the contrast generation and discusses the proper experimental setup to be used for the quantitative two-dimensional delineation of bipolar and homojunctions in Silicon Carbide devices. 

From This Paper

Figures, tables, and topics from this paper.


Publications citing this paper.


Publications referenced by this paper.
Showing 1-8 of 8 references

Metal/semiconductor contacts for organic molecules

2006 IEEE Workshop on Microelectronics and Electron Devices, 2006. WMED '06. • 2006
View 1 Excerpt

Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid system

Ch. Thomas, I. Joachimsthaler, R. Heiderhoff, L. J. Balk
J. Phys. Appl. Phys • 2004
View 1 Excerpt

Mechanism for secondary electron dopant contrast in the SEM

Journal of electron microscopy • 2000
View 1 Excerpt

Mapping electrically active dopant profiles by field-emission scanning electron microscopy

R. Turan, D. D. Perovic, D. C. Houghton
Appl. Phys. Lett. 69(11), • 1996
View 1 Excerpt

Scanning Electron Microscopy. Physics of image formation and microanalysis

L. Reimer
View 2 Excerpts

Semiconductor Devices Physics and Technology

S. M. Sze
View 1 Excerpt

The Examination of p-n Junctions with the Scanning Electron Microscope

C. W. Oatley, T. E. Everhart
Journal of Electronics • 1957
View 1 Excerpt

Similar Papers

Loading similar papers…