Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.

@article{Joyce2007TwinfreeUE,
  title={Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.},
  author={Hannah J. Joyce and Qiang Gao and Hark Hoe Tan and Chennupati Jagadish and Yong Goh Kim and Xin Zhang and Yanan Guo and Jin Zou},
  journal={Nano letters},
  year={2007},
  volume={7 4},
  pages={921-6}
}
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate… CONTINUE READING
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