Tunneling magnetoresistive heads beyond 150 Gb/in/sup 2/

@article{Mao2004TunnelingMH,
  title={Tunneling magnetoresistive heads beyond 150 Gb/in/sup 2/},
  author={Sining Mao and E. Linville and J. Nowak and Zhenyong Zhang and Shawn Chen and B. Karr and Pia Anderson and M. Ostrowski and T. Boonstra and Hae-Seok Cho and O. Heinonen and M. Kief and Song Xue and J. Price and A. Shukh and N. Amin and P. Kolbo and Pu-Ling Lu and P. Steiner and Yong Chang Feng and Nan-Hsiung Yeh and B. Swanson and P. Ryan},
  journal={IEEE Transactions on Magnetics},
  year={2004},
  volume={40},
  pages={307-312}
}
  • Sining Mao, E. Linville, +20 authors P. Ryan
  • Published 2004
  • Materials Science
  • IEEE Transactions on Magnetics
  • Tunneling magnetoresistive (TMR) readers capable of 150 Gb/in/sup 2/ of areal density magnetic recording for hard disk drive were demonstrated with bit-error-rate performance. The head design used is basically a bottom type stack of Ta/PtMn/CoFe/Ru/CoFe/oxide barrier/CoFe/NiFe/Ta cap with abutted hard bias stabilization. The electrical reader width is about 4 /spl mu/'' to reach a very high track density and shield-to-shield spacing is about 700 /spl Aring/ for high linear density. On-track bit… CONTINUE READING
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