Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs


Although charge pumping (CP) is a powerful technique to measure the energy and spatial distributions of interface trap and oxide trap in MOS devices, the parasitic gate leakage current in it is the bottleneck. A CP method was modified and applied to high-k gate dielectric in this work to separate the CP current from the parasitic tunneling component in MOS… (More)
DOI: 10.1016/j.microrel.2011.04.021


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