Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs

@article{Lu2011TunnelingCS,
  title={Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs},
  author={Chun-Chang Lu and Kuei-Shu Chang-Liao and Chun-Yuan Lu and Shih-Cheng Chang and Tien-Ko Wang and Fu-Chung Hou and Yao-Tung Hsu},
  journal={Microelectronics Reliability},
  year={2011},
  volume={51},
  pages={2110-2114}
}
Although charge pumping (CP) is a powerful technique to measure the energy and spatial distributions of interface trap and oxide trap in MOS devices, the parasitic gate leakage current in it is the bottleneck. A CP method was modified and applied to high-k gate dielectric in this work to separate the CP current from the parasitic tunneling component in MOS devices. The stress-induced variations of electrical parameters in high-k gated MOS devices were investigated and the physical mechanism was… CONTINUE READING