Tunneling-assisted impact ionization fronts in semiconductors

  • Pavel Rodina
  • Published 2002

Abstract

We discuss a type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an extremely sharp voltage ramp (;10 kV/ns) is applied in reverse direction to a Si p – n – n structure that is connected in… (More)

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