Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

@article{Verma2013TunnelinjectionGQ,
  title={Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes},
  author={Jai Kishan Verma and Prem K. Kandaswamy and Vladimir Protasenko and Amit Verma and Huili Grace Xing and Debdeep Jena},
  journal={Applied Physics Letters},
  year={2013},
  volume={102},
  pages={041103}
}
We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve… 

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References

SHOWING 1-10 OF 37 REFERENCES

Tunnel injection In0.25Ga0.75N/GaN quantum dot light-emitting diodes

Hole tunnel injection is incorporated in the design of In0.25Ga0.75N/GaN quantum dot light-emitting diodes with peak emission at λ∼500 nm. Calculations show that cold holes are uniformly injected

Quaternary InAlGaN quantum‐dot ultraviolet light‐emitting diode emitting at 335 nm fabricated by anti‐surfactant method

In order to realize high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or low threshold current UV laser diodes (LDs), group-III nitride quantum dots (QDs) are very attractive. We

Valence band engineering for remarkable enhancement of surface emission in AlGaN deep‐ultraviolet light emitting diodes

Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet (UV) light emitting diodes (LEDs) has been theoretically investigated by the calculation using the

Growth of III‐nitride quantum dots and their applications to blue‐green LEDs

In this paper we discuss the growth of InN, GaN and InGaN QDs by MBE on either GaN or AlN templates. InN QDs on GaN templates were found to occur without an InN wetting layer, a result consistent

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

An AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED, represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.

Direct comparison of recombination dynamics in cubic and hexagonal GaN-AlN quantum dots

We report on time-integrated and -resolved photoluminescence (PL) data on self-assembled GaN quantum dots (QD's) embedded in AlN, in both cubic [zinc-blende (ZB)] and hexagonal [wurtzite (Wz)]

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting

Short‐period AlN/GaN p‐type superlattices: hole transport use in p‐n junctions

Hole transport properties of short-period Mg-doped AlN/GaN superlattices are compared with bulk Mg-doped GaN layers. Due to polarization-induced reduction in acceptor ionization energy, the

Effect of phonon bottleneck on quantum-dot laser performance

The effect of phonon bottleneck on quantum-dot laser performance is examined by solving the carrier-photon rate equations including the carrier relaxation process into the quantum-dot ground state.