Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

  title={Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes},
  author={Jai Kishan Verma and Prem K. Kandaswamy and Vladimir Protasenko and Amit Verma and Huili Grace Xing and Debdeep Jena},
  journal={Applied Physics Letters},
We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve… 

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