# Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

@article{Verma2013TunnelinjectionGQ,
title={Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes},
author={Jai Kishan Verma and Prem K. Kandaswamy and Vladimir Protasenko and Amit Verma and Huili Grace Xing and Debdeep Jena},
journal={Applied Physics Letters},
year={2013},
volume={102},
pages={041103}
}
• Published 28 January 2013
• Physics, Materials Science
• Applied Physics Letters
We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve…
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## References

SHOWING 1-10 OF 37 REFERENCES

• Physics
• 2010
Hole tunnel injection is incorporated in the design of In0.25Ga0.75N/GaN quantum dot light-emitting diodes with peak emission at λ∼500 nm. Calculations show that cold holes are uniformly injected
• Chemistry
• 2008
In order to realize high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or low threshold current UV laser diodes (LDs), group-III nitride quantum dots (QDs) are very attractive. We
Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet (UV) light emitting diodes (LEDs) has been theoretically investigated by the calculation using the
• Materials Science
• 2008
In this paper we discuss the growth of InN, GaN and InGaN QDs by MBE on either GaN or AlN templates. InN QDs on GaN templates were found to occur without an InN wetting layer, a result consistent
• Materials Science
Nature
• 2006
An AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED, represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.
• Physics
Nature
• 2000
It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
• Physics
• 2003
We report on time-integrated and -resolved photoluminescence (PL) data on self-assembled GaN quantum dots (QD's) embedded in AlN, in both cubic [zinc-blende (ZB)] and hexagonal [wurtzite (Wz)]
• Materials Science
• 2012
Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting
• Chemistry
• 2010
Hole transport properties of short-period Mg-doped AlN/GaN superlattices are compared with bulk Mg-doped GaN layers. Due to polarization-induced reduction in acceptor ionization energy, the
• Jing Zhang
• Materials Science
OPTO
• 2012
The gain characteristics of AlGaN-delta-GaN QWs active region with varying delta-GaN positions and AlGaN compositions are analyzed. From our finding, the use of AlGaN-delta-GaN QW resulted in ~