Tunnel-injected sub-260 nm ultraviolet light emitting diodes

@article{Zhang2017TunnelinjectedSN,
  title={Tunnel-injected sub-260 nm ultraviolet light emitting diodes},
  author={Yuewei Zhang and Sriram Krishnamoorthy and Fatih Akyol and Sanyam Bajaj and A. A. Allerman and Michael W. Moseley and Andrew M. Armstrong and Siddharth Rajan},
  journal={Applied Physics Letters},
  year={2017},
  volume={110},
  pages={201102}
}
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed… 

Figures from this paper

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in
Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
The use of tunnel junctions (TJs) is a potential solution in blue light-emitting diodes (LEDs) to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for UV-emitting
An AlGaN tunnel junction light emitting diode operating at 255 nm
We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) by using plasmaassisted molecular beam epitaxy. The device heterostructure was
Electron overflow of AlGaN deep ultraviolet light emitting diodes
We have studied the design, epitaxy, and performance characteristics of deep ultraviolet (UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization-engineered AlGaN
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide bandgap AlGaN, and we show that UV-reflective aluminum (Al)
High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes
AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only alternative technology to replace mercury lamps for water purification and disinfection. At present,
Group III-Nitride-Based UV Laser Diodes
Recent progress in the development of deep ultraviolet lasers is reviewed as well as challenges for the heterostructure design and epitaxial growth for AlGaN-based laser diodes are discussed. The
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) are identified as the promising candidate for energy-efficient, environment-friendly and robust UV lighting source in the application
Monolayer GaN excitonic deep ultraviolet light emitting diodes
We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the
Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
TLDR
Novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the electrons injected to the active region and improve radiative recombination.
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 33 REFERENCES
Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work,
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼1020 cm−3, thanks to the low growth temperature.
Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the
An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.
TLDR
It is demonstrated that critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures, which exhibit high photoluminescence efficiency in the UV-C band at room temperature and nearly one order of magnitude reduction in the device resistance.
Hybrid tunnel junction contacts to III–nitride light-emitting diodes
In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal
GaN-Based Light Emitting Diodes With Tunnel Junctions : Semiconductors
We have demonstrated hole injection through a tunnel junction embedded in the GaN-based light emitting diode structure. The tunnel junction consists of 30 nm GaN:Si++ and 15 nm InGaN:Mg++ grown on a
Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band. The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that with the use of the
Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.
TLDR
Through the monolithic integration of p- GaN up and p-GaN down nanowire LED structures on the same substrate, it is demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities of applied voltage.
Multi‐color light emitting diode using polarization‐induced tunnel junctions
A multi-color light emitting diode (LED) using two distinct active regions connected via a tunnel junction was grown by rf-plasma-assisted molecular beam epitaxy. The LED is contacted through n-type
...
1
2
3
4
...