Tunnel field-effect transistors as energy-efficient electronic switches

  title={Tunnel field-effect transistors as energy-efficient electronic switches},
  author={Adrian M. Ionescu and Heike E. Riel},
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs… 
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities.
In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices.
Low-power tunnel field effect transistors using mixed As and Sb based heterostructures
Abstract Reducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal oxide
Tunneling Field-Effect Transistors for Ultra-Low-Power Application
One of the major roadblocks to further scaling of complementary metal-oxide semiconductor (CMOS) devices is power consumption. Reduction of power consumption requires low operation voltage, which
Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic
Driven by a strong demand for mobile and portable electronics, the chip market will undoubtedly impose low power as the key metric for microprocessor design. Although circuit and system level methods
Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches
It is shown that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower subthreshold swing and supply voltage in field-effect transistors.
Complementary Black Phosphorus Tunneling Field-Effect Transistors.
Two complementary TFETs based on few-layer black phosphorus are demonstrated, in which multiple top gates create electrostatic doping in the source and drain regions, and atomistic simulations of the fabricated devices agree quantitatively with the current-voltage measurements.
Tunnel FET
A tunnel field effect transistor is a substitute for ultra-low power applications
  • C. P. Kumar, K. Sivani
  • Engineering
    2016 International Conference on Advances in Human Machine Interaction (HMI)
  • 2016
As Moors law is concerned, down scaling of conventional CMOS technology results in, rapidly approaching fundamental limits. Alternative device structures are constantly proposed to substitute the
A Comparative Analysis of Tunneling FET Characteristics for Low Power Digital Circuits
The technology used in today’s transistors is called “field effect” whereby voltage induces an electron channel that activates the transistor. But field effect technology is approaching its limits,
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less than 60 mV of gate


Complementary tunneling transistor for low power application
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
In this paper, we present a detailed performance comparison between conventional n-i-n MOSFET transistors and tunneling field-effect transistors (TFETs) based on the p-i-n geometry, using
On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors
We compare the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal-oxide-semiconductor field-effect transistor counterpart. Due to the
Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.
Strong evidence is obtained that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics, and it is shown that, under large biasing conditions, two-phonon scattering may also become important.
Band-to-band tunneling in carbon nanotube field-effect transistors.
How the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect is discussed, which is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement.
Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications
This letter presents the design of a tunneling FET with III-V-based tunnel heterojunctions for operation in digital circuits with supply voltages as low as 0.3 V. A representative implementation is
Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs
We present fabrication, optimization and application aspects of complementary Multiple-Gate Tunneling FETs (MuGTFETs). Tunneling FETs are implemented in a MuGFET technology for the first time. N- and
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can
Use of negative capacitance to provide voltage amplification for low power nanoscale devices.
By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.