Tunnel field-effect transistors as energy-efficient electronic switches

@article{Ionescu2011TunnelFT,
  title={Tunnel field-effect transistors as energy-efficient electronic switches},
  author={Adrian M. Ionescu and Heike E. Riel},
  journal={Nature},
  year={2011},
  volume={479},
  pages={329-337}
}
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs… 
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Complementary tunneling transistor for low power application
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