Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption.

@article{Jiang2016TuningTT,
  title={Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption.},
  author={Jie Jiang and Sarit Dhar},
  journal={Physical chemistry chemical physics : PCCP},
  year={2016},
  volume={18 2},
  pages={
          685-9
        }
}
  • J. Jiang, S. Dhar
  • Published 14 January 2016
  • Physics
  • Physical chemistry chemical physics : PCCP
Selective chemical doping in two-dimensional (2D) molybdenum disulfide (MoS2) is attractive for tailoring electrical properties according to device requirements. However, the ultra-thin 2D nature of MoS2 makes it difficult to realize effective doping by conventional ion implantation. Here, a simple method based on low-temperature (150 °C) annealing in air is developed for effective chemical doping in MoS2. We have demonstrated that the threshold voltage (V(th)) of multilayer MoS2 FET can be… 
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References

SHOWING 1-10 OF 24 REFERENCES
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.
TLDR
It is demonstrated that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200-300 Ω μm at zero gate bias.
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer…
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.
TLDR
The results here demonstrate the need of degenerate doping of few-layer chalcogenides to improve the contact resistances and further realize high performance and complementary channel electronics.
Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.
TLDR
The fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2 with observed performance enhancement to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin IL dielectric layer is reported.
Sensing behavior of atomically thin-layered MoS2 transistors.
TLDR
The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light, and ab initio DFT calculations show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.
Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors.
TLDR
The study suggests that surface passivation is important for MoS(2)-based electronic devices and recommends that polymethyl methacrylate-passivated devices should be considered as a preferred material for FETs.
Air-stable surface charge transfer doping of MoS₂ by benzyl viologen.
TLDR
Benzyl viologen (BV), which has one of the highest reduction potentials of all electron-donor organic compounds, is demonstrated as a surface charge transfer donor for MoS2 flakes, exhibiting excellent stability in both ambient air and vacuum.
Single-layer MoS2 transistors.
TLDR
Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
TLDR
This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
High performance multilayer MoS2 transistors with scandium contacts.
TLDR
It is demonstrated that through a proper understanding and design of source/drain contacts and the right choice of number of MoS(2) layers the excellent intrinsic properties of this 2-D material can be harvested.
...
1
2
3
...