Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption.


Selective chemical doping in two-dimensional (2D) molybdenum disulfide (MoS2) is attractive for tailoring electrical properties according to device requirements. However, the ultra-thin 2D nature of MoS2 makes it difficult to realize effective doping by conventional ion implantation. Here, a simple method based on low-temperature (150 °C) annealing in air… (More)
DOI: 10.1039/c5cp06322a