Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires.

  title={Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires.},
  author={T Stettner and A. Thurn and Markus D{\"o}blinger and Megan O. Hill and Jochen Bissinger and P. Schmiedeke and Sonja Matich and T. Kostenbader and Daniel Ruhstorfer and Hubert Riedl and Michael Kaniber and Lincoln J. Lauhon and Jonathan J. Finley and Gregor Koblm{\"u}ller},
  journal={Nano letters},
  volume={18 10},
Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell… 
34 Citations

Figures from this paper

Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature
Realizing telecom-band lasing in GaAs-based nanowires (NW) with low bandgap gain media has proven to be notoriously difficult due to the high compressive strain built up in the active regions. Here,
Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire.
The results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We
Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices
III–V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their
Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
The NW laser structure is extended to coaxial III–V–V QWs, which are highly suitable as the platform for NW emitters and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance.
Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing.
Doping and nanowire length are identified as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm-3 and lengths of ≳4 μm, and a best-in-class core-only near-infrared nanowires lasing threshold of ∼10 μJ cm-2 is reported.
GaAsP nanowires containing intentional and self-forming quantum dots
GaAsP nanowires (NWs) containing a range of different heterostructures are shown to be a highly promising system for the fabrication of efficient and novel ultra-small light emitters. NWs containing
Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature
The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.
Toward electrically driven semiconductor nanowire lasers
This review categorizes NW lasers according to their lasing wavelength and wavelength tunability, and summarizes the methods used for achieving single-mode lasing in NWs, and offers a perspective on future improvements and trends.
Optical property and lasing of GaAs-based nanowires
GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics. In the past few decades, the field of NW lasers has developed rapidly. Compared with


Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature.
By carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors using core-shell GaAs-AlGaAs nanowires.
Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature.
The realization of single-mode and room-temperature lasing from 890 to 990 nm is reported, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping.
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to
Room-temperature lasing in a single nanowire with quantum dots
Nanowire (NW) lasers have recently attracted increasing attention as ultra-small, highly-efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although
Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.
It is shown that there is a limit to the minimum and maximum number of QWs that are required for room-temperature lasing and that the TE01 mode, which has a doughnut-shaped intensity profile, is predicted to lase in these nanowire heterostructures, is chosen for the cavity design.
Direct Coupling of Coherent Emission from Site-Selectively Grown III–V Nanowire Lasers into Proximal Silicon Waveguides
Semiconductor nanowire (NW) lasers are nanoscale coherent light sources that exhibit a small footprint, low-threshold lasing characteristics, and properties suitable for monolithic and site-selective
Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.
GaAs-based nanowires are used as building blocks for the emission of light with micrometer wavelength that are monolithically integrated on Si substrates to demonstrate the great potential of this technology.
Single gallium nitride nanowire lasers
A redshift that is strongly dependent on pump power supports the idea that the electron–hole plasma mechanism is primarily responsible for the gain at room temperature and is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet–blue coherent light sources.
Optical Cavity Effects in ZnO Nanowire Lasers and Waveguides
Wide band gap semiconductor nanostructures with near-cylindrical geometry and large dielectric constants exhibit two-dimensional ultraviolet and visible photonic confinement (i.e., waveguiding).
Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
We demonstrate single-mode continuous wave (cw) lasing from individual GaAs-AlGaAs core-shell nanowires (NWs) subject to optical excitation. By comparing the s-shaped input-output characteristics of