Tungsten incorporation in diamond thin films prepared by the hotfilament technique

@inproceedings{Gheeraert1992TungstenII,
  title={Tungsten incorporation in diamond thin films prepared by the hotfilament technique},
  author={Etienne Gheeraert and Alain Deneuville and Marc Brunel and Jean Claude Oberlin},
  year={1992}
}
The films were deposited at 750 °C from CH4 (0.1–1.2%)H2 mixtures, with a hot tungsten (W) filament at a temperature around 2500 K, on unscratched or scratched silicon (Si) substrates. From Rutherford backscattering, W is always incorporated in the films, homogeneously, with a nearly constant total concentration around 1016 atom cm−2. It originates from the thermal decomposition of the carburized W filament at 2500 K. From X-ray diffraction at glancing incidence, the nature and the location of… CONTINUE READING