Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD.

@article{Sain2013TunablePF,
  title={Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD.},
  author={Basudeb Sain and Debajyoti Das},
  journal={Physical chemistry chemical physics : PCCP},
  year={2013},
  volume={15 11},
  pages={
          3881-8
        }
}
Intense visible photoluminescence (PL) tunable within 1.66-2.47 eV, under UV 325 nm excitation, was obtained from nanocrystalline silicon quantum dots (∼5.72-1.67 nm in diameter) embedded in amorphous silicon-nitride matrix (nc-Si/a-SiN(x):H) prepared in RF-ICPCVD (13.56 MHz) at substrate temperatures between 400 to 150 °C. The dominant component of PL, having a narrow band width of ∼0.16-0.45 eV, originates from quasi-direct band-to-band recombination due to quantum confinement effect (QCE) in… CONTINUE READING
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