Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width

The superjunction (SJ) MOSFET power device is recognized for its higher blocking capability and lower on-state resistance that break the conventional unipolar silicon limit. However, SJ devices below 100 V rating incur the constraint of unrealistically narrow column widths , and their performance is greatly handicapped due to difficulties in the formation… (More)