Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

Abstract

We have systematically studied the effect of the back-gate voltage on the low-frequency noise properties of the MoS<sub>2</sub> transistors from 300 to 20 K in this work. The results show that the performance of the top-gate MoS<sub>2</sub> transistor can be effectively tuned by the back-gate voltage <inline-formula> <tex-math notation="LaTeX">${V}_{\text… (More)

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