Tunable Dirac Electron and Hole Self-Doping of Topological Insulators Induced by Stacking Defects.


Via density functional theory based calculations we show that self-doping of the surface Dirac cones in three-dimensional Bi2X3 (X = Se, Te) topological insulators can be tuned by controlling the sequence of stacking defects in the crystal. Twin boundaries inside the Bi2X3 bulk drive either n- or p-type self-doping of the (0001) topological surface states… (More)
DOI: 10.1021/acs.nanolett.5b00625


5 Figures and Tables