Triple patterning aware detailed placement toward zero cross-row middle-of-line conflict

@article{Lin2015TriplePA,
  title={Triple patterning aware detailed placement toward zero cross-row middle-of-line conflict},
  author={Yibo Lin and Bei Yu and Biying Xu and David Z. Pan},
  journal={2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)},
  year={2015},
  pages={396-403}
}
Triple patterning lithography (TPL) is one of the most promising lithography technology in sub-14nm technology nodes, especially for complicated low metal layer manufacturing. To overcome the intra-cell routability problem and improve the cell regularity, recently middle-of-line (MOL) layers are employed in standard cell design. However, MOL layers may introduce a large amount of cross-row TPL conflicts for row based design. Motivated by this challenge, in this paper we propose the first TPL… CONTINUE READING
Highly Cited
This paper has 25 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 10 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 29 references

Optical lithography with and without NGL for single-digit nanometer nodes

  • B. J. Lin
  • Proceedings of SPIE, vol. 9426, 2015.
  • 2015
1 Excerpt

The daunting complexity of scaling to 7nm without EUV: Pushing DTCO to the extreme

  • L. Liebmann, A. Chu, P. Gutwin
  • Proceedings of SPIE, vol. 9427, 2015.
  • 2015
1 Excerpt

Demonstrating production quality multiple exposure patterning aware routing for the 10nm node

  • L. Liebmann, V. Gerousis, P. Gutwin, M. Zhang, G. Han, B. Cline
  • Proceedings of SPIE, 2014.
  • 2014
1 Excerpt

Similar Papers

Loading similar papers…