Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability

@article{Nada2014TriplemesaAP,
  title={Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability},
  author={Masahiro Nada and Yoshifumi Muramoto and Haruki Yokoyama and Tadao Ishibashi and Hideaki Matsuzaki},
  journal={Journal of Lightwave Technology},
  year={2014},
  volume={32},
  pages={1543-1548}
}
  • Masahiro Nada, Yoshifumi Muramoto, +2 authors Hideaki Matsuzaki
  • Published in
    Journal of Lightwave…
    2014
  • Physics
  • A 25-Gbit/s avalanche photodiode (APD) using an inverted p-down structure and triple-mesa structure for eliminating an edge breakdown and reducing an electric field at a surface of the device is proposed and examined. Active area dependence of dark current and activation energy as small as 0.17 eV strongly suggest that the surface leakage current is negligible, and the edge breakdown does not occur. As for RF characteristics, sufficient 3-dB bandwidth of 18 GHz for 25-Gbit/s operation is… CONTINUE READING

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