• Corpus ID: 234762869

Triple Andreev dot chains in semiconductor nanowires

@inproceedings{Wu2021TripleAD,
  title={Triple Andreev dot chains in semiconductor nanowires},
  author={Hao Wu and Po Zhang and John Stenger and Zhaoen Su and Jun Chen and Ghada Badawy and Sa{\vs}a Gazibegovi{\'c} and Erik P.A.M. Bakkers and Sergey M. Frolov},
  year={2021}
}
Hao Wu, Po Zhang, John P. T. Stenger, Zhaoen Su, Jun Chen, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, and Sergey M. Frolov ∗ Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, 15260, USA Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands 

Figures from this paper

Conductance of a dissipative quantum dot: Nonequilibrium crossover near a non-Fermi-liquid quantum critical point

Gu Zhang,1, 3, ∗ E. Novais,2, † and Harold U. Baranger1, ‡ Department of Physics, Duke University, Durham, North Carolina 27708-0305, U.S.A. Centro de Ciı́ncias Naturais e Humanas, Universidade

Quantum capacitance of a superconducting subgap state in an electrostatically floating dot-island

We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting

References

SHOWING 1-3 OF 3 REFERENCES

Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices

This work introduces an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility and allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching.

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter (∼30 nm) is much thinner than before (∼100 nm). The

Freedman

  • Phys. Rev. B
  • 2017