Trial Application of Tight-Binding Method to Si-Cluster Surrounded by SiO2 in Optimized Atomistic Network: Si-Cluster Surrounded SiO2 is Quite Unique

A tight-binding method is applied to optimized Sicluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states. Keywords-component; tight-binding; molecular-dynamics;Sidot; floating-gate… (More)