Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO3 film

@inproceedings{Gao2015TristateBR,
  title={Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO3 film},
  author={Cunxu Gao and Fengzhen Lv and Peng Zhang and Chao Yu Zhang and Shiming Zhang and Chunhui Dong and Yingchun Gou and Changjun Jiang and Desheng Xue},
  year={2015}
}
Abstract A crystalline BiFeO 3 (BFO) heteroepitaxial film was produced by mild hydrothermal epitaxy on a Nb–SrTiO 3 (100) (NSTO) substrate. The resulting coated substrate was used to fabricate a Pt/BFO/NSTO heterostructure device. The device exhibits reversible bipolar resistive switching behavior. The resistance states can be reversibly switched among multiple levels, by changing the magnitude of the reset pulse voltage. This illustrates the devices potential in multilevel nonvolatile memory… CONTINUE READING

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  • Journal of Wuhan University of Technology-Mater. Sci. Ed.
  • 2018
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