Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR

Abstract

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current–voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forwardbiasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

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Cite this paper

@inproceedings{Jin2004TriStateLU, title={Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR}, author={Niu Jin and S Chung and Marc M. Heyns and Paul R. Berger and Ronghua Yu and Phillip E . Thompson}, year={2004} }