Trends and perspectives for electrical characterization and reliability assessment in advanced CMOS technologies

@article{Groeseneken2010TrendsAP,
  title={Trends and perspectives for electrical characterization and reliability assessment in advanced CMOS technologies},
  author={Guido Groeseneken and Robin Degraeve and Ben Kaczer and Koen Martens},
  journal={2010 Proceedings of the European Solid State Device Research Conference},
  year={2010},
  pages={64-72}
}
In this paper we give a brief historical review of the evolution of device reliability research over the past decades. Then we give some examples on how established characterization techniques that were developed for silicon based devices can be completely misinterpreted when applied to Ge or III–V based MOS-structures, and how a simple modification of the technique can ensure a correct interpretation. We also show how novel techniques, such as TSCIS (Trap spectroscopy by Charge Injection and… CONTINUE READING
Highly Cited
This paper has 28 citations. REVIEW CITATIONS
19 Citations
30 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 19 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 30 references

Phys

  • S. Ogawa, M. Shimaya, N. Shiono, J. Appl
  • 77, 1137
  • 1995
Highly Influential
9 Excerpts

G

  • E. Maricau
  • Gielen, Proceedings IEEE Design Automation…
  • 2010

Ph

  • B. Kaczer, T. Grasser
  • J. Roussel, J. Franco, R. Degraeve, L.-A…
  • 2010
2 Excerpts

Ieee T

  • A. Ghetti, C. M. Compagnoni, A. S. Spinelli, A. Visconti
  • Electron Dev., p. 1746
  • 2009
1 Excerpt

Int

  • M. F. Bukhori, S. Roy, A. Asenov
  • Integ. Rel. Workshop
  • 2009
1 Excerpt

B

  • F. Maeyer, C. Le Royer, J.-F Damlencourt, K. Romanjek, F. Andrieu, C. Tabone
  • Previtali and S. Deleonibus, IEDM Tech Dig., p…
  • 2008

Ch

  • G. Mavrou, S. Galata, +5 authors J. W. Seo
  • Dieker, J. of Appl. Phys., Vol. 103, p. 014506…
  • 2008
1 Excerpt

IEDM Tech

  • R. Degraeve, M. Cho, +5 authors G. Groeseneken
  • Dig., p. 775
  • 2008
1 Excerpt

Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high - k metal gate stacks

  • J. M. Hartmann, S. Deleonibus, F. Boulanger
  • J . Appl . Phys .
  • 2008

J

  • B. Govoreanu, R. Degraeve
  • Van Houdt and M. Jurczac., IEDM Tech. Dig., p…
  • 2008

Similar Papers

Loading similar papers…