Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's

@article{Meneghesso1996TrappedCM,
  title={Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's},
  author={Gaudenzio Meneghesso and Claudio Canali and Paolo Cova and Eros De Bortoli and Enrico Zanoni},
  journal={IEEE Electron Device Letters},
  year={1996},
  volume={17},
  pages={232-234}
}
A new degradation mechanism of PM-HEMT's subsequent to hot electron stress tests or high temperature storage tests is presented. A noticeable increase in drain-to-source current, I/sub DS/, is observed after the tests. We show that this I/sub DS/ variation is slowly recoverable and is correlated with the presence of deep levels in the device. Stress tests cause a variation of trapped charge. Trapping of holes created by impact-ionization and/or thermally stimulated electron detrapping induce a… CONTINUE READING

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