Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements

Abstract

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, Drain Current Transient (DCT) measurements and Low Frequency output-admittance (LF Y22) dispersion measurements. DCT characterization is carried out over a 7-decade time scale. LF Y22 measurements are carried out over the frequency range from 10 Hz to 10 MHz. These… (More)

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