Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Abstract

A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by… (More)

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