Transport of indirect excitons in ZnO quantum wells.

  title={Transport of indirect excitons in ZnO quantum wells.},
  author={Yuliya Y. Kuznetsova and Fedor Fedichkin and Peristera Andreakou and E. V. Calman and L V Butov and Pierre Lefebvre and Thierry Bretagnon and Thierry Guillet and Maria Vladimirova and C. Morhain and J. M. Chauveau},
  journal={Optics letters},
  volume={40 15},
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells. 

Figures from this paper

High-mobility indirect excitons in wide single quantum well
Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared
Indirect excitons in hydrogen-doped ZnO
We present a correlative experimental and theoretical study of bound excitons in hydrogen-doped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface
Room-temperature transport of indirect excitons in (Al,Ga)N/GaN quantum wells
We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of
Temperature Induced Localization Dynamics of Exciton in ZnO/MgZnO and CdZnO/MgZnO Quantum Well
The localization dynamics of photo-generated excitons in ZnO/MgZnO and CdZnO/MgZnO quantum wells (QWs) are studied using the Monte Carlo simulation of exciton hoping for the temperature range of 5 to
Trapping dipolar exciton fluids in GaN/(AlGa)N nanostructures.
The in- plane confinement and cooling of dipolar excitons are demonstrated, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface, a prerequisite for the electrical control of the exciton densities and fluxes.
Long-range quantum transport of indirect excitons in van der Waals heterostructure
Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of
Room-temperature electrical control of exciton flux in a van der Waals heterostructure
The ability to manipulate exciton dynamics by creating electrically reconfigurable confining and repulsive potentials for the exciton flux is demonstrated and the results make a strong case for integrating two-dimensional materials in future excitonic devices to enable operation at room temperature.
Indirect excitons in van der Waals heterostructures at room temperature
The observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructure establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IX's and for aField ofhigh-tem temperature excitonic devices.


Linewidth dependence of radiative exciton lifetimes in quantum wells.
The fundamental relationship between radiative lifetime and spectral linewidth of free excitons is demonstrated theoretically and experimentally for quasi 2D excitons in GaAs/AlGaAs quantum wells.
Nanoscale transport of excitons at the interface between ZnO and a molecular monolayer
Time-resolved near-field optical microsopy maps exciton transport in a hybrid system. Within the 100 ps photoluminescence lifetime, an equilibrium distribution of surface and bound excitons displays
Drift mobility of long-living excitons in coupled GaAs quantum wells
The authors report on high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum
Optically controlled excitonic transistor
We present experimental proof of principle for all-optical excitonic routers and all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the
Internal electric field in wurtzite Zn O ∕ Zn 0.78 Mg 0.22 O quantum wells
Continuous-wave, time-integrated, and time-resolved photoluminescence experiments are used to study the excitonic optical recombinations in wurtzite ZnO/Zn0.78Mg0.22O quantum wells of varying widths.
Origin of the inner ring in photoluminescence patterns of quantum well excitons
In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of
Electric‐field‐induced exciton transport in coupled quantum well structures
We report a conceptionally new approach to achieve electrostatically induced transport and confinement for spatially indirect excitons. Experimentally, exciton transport is demonstrated in an
Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates
We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (101¯2) R-plane ZnO substrates. We demonstrate that atomically flat interfaces
Excitonic transport in ZnO
The temperature dependence of diffusion length and lifetime or diffusivity of the free exciton is measured in a commercial ZnO-substrate and in an epitaxial ZnO quantum well using nm-spatially and