Transport-Analysis-Based 3-D TCAD Capacitance Extraction for Sub-32-nm SRAM Structures

  title={Transport-Analysis-Based 3-D TCAD Capacitance Extraction for Sub-32-nm SRAM Structures},
  author={Ajay N. Bhoj and R. V. Joshi},
  journal={IEEE Electron Device Letters},
Capacitance extraction for nanoscale circuits operating at high frequencies plays an important role in accurately modeling postlayout electrical behavior. In this work, for the first time, a layout-independent 3-D technology computer-aided design (TCAD)-based methodology is used to precisely compute front-end-of-the-line (FEOL) and back-end-of-the-line capacitances in SRAM structures using advanced sub-32-nm SOI process assumptions. Results for multicell single-/dual-ported 6T SRAM blocks… CONTINUE READING