Transparent IGZO-Based Logic Gates

Abstract

Optically transparent indium-gallium-zinc-oxide-based nand and nor gates and inverters were fabricated and characterized using transistors deposited at room temperature with 5-, 10-, and 20-μm gate lengths and beta ratio between 2.5 and 40. The nand and nor gates' operation frequencies were measured up to 5 kHz. The individual transistors were measured to… (More)

4 Figures and Tables

Topics

  • Presentations referencing similar topics