Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

  title={Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors},
  author={Mallory Mativenga and Min Hyuk Choi and Jae Won Choi and Jin Jang},
  journal={IEEE Electron Device Letters},
Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on polyimide/polyethylene-terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19 cm2/V·s and a gate voltage swing of ~0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 μs. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability… CONTINUE READING
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Gate-bias stress in amorphous oxide semiconductors thin-film transistors

  • M. E. Lopes, H. L. Gomes, +5 authors I. Ferreira
  • Appl. Phys. Lett., vol. 95, no. 6, pp. 063502-1…
  • 2009
1 Excerpt

Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display

  • S.-H.K. Park, M. Ryu, +10 authors S. Im
  • Proc. SID Dig., May 2008, vol. 39, no. 1, pp. 629…
  • 2008
1 Excerpt

Circuits using uniform TFTs based on amorphous In–Ga–Zn–O

  • R. Hayashi, M. Ofuji, +9 authors H. Hosono
  • J. SID, vol. 15, no. 11, pp. 915–921, Nov. 2007.
  • 2007
1 Excerpt

Amorphous oxide semiconductors for high-performance flexible thinfilm transistors

  • K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, H. Hosono
  • Jpn. J. Appl. Phys., vol. 45, no. 5B, pp. 4303…
  • 2006
1 Excerpt

Circuits using uniform TFTs based on amorphous In – Ga – Zn – O Ionic amorphous oxide semiconductors : Material design , carrier transport , and device application

  • H. Ohta K. Nomura, K. Ueda, T. Kamiya, M. Hirano, H. Hosono
  • J . Non - Cryst . Solids
  • 2006

Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

  • H. Hosono
  • J. Non-Cryst. Solids, vol. 352, no. 9–20, pp. 851…
  • 2006
2 Excerpts

Novel a-Si:H gate drivers with high reliability

  • J. H. Koo, J. W. Choi, +4 authors J. Jang
  • Proc. IDW, Dec. 2006, vol. 2, pp. 757–760, AMDp…
  • 2006
1 Excerpt

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