Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

@article{Mativenga2011TransparentFC,
  title={Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors},
  author={Mallory Mativenga and Min Hyuk Choi and Jae Won Choi and Jin Jang},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={170-172}
}
Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on polyimide/polyethylene-terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19 cm2/V·s and a gate voltage swing of ~0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 μs. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability… CONTINUE READING
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