Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substrates

@inproceedings{Foell1981TransmissionEM,
  title={Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substrates},
  author={Helmut Foell and Paul S. Ho},
  year={1981}
}
The formation of PtSi and Pd2Si on chemically cleaned and on slightly oxidized Si substrates had been investigated by TEM with cross‐sectional specimens. The oxide has been found to influence the silicide‐Si interface roughness, the silicide surface roughness,and the corrosion behavior of the silicide layer. The formation of PtSi is more sensitive to the presence of oxide than Pd2Si and may even be suppressed. Remnants of the oxide are identified within the silicide using Auger sputter… CONTINUE READING