Transistor operations in 30-nm-gate-length EJ-MOSFETs

@article{Kawaura1997TransistorOI,
  title={Transistor operations in 30-nm-gate-length EJ-MOSFETs},
  author={H. Kawaura and T. Sakamoto and T. Baba and Y. Ochiai and J. Fujita and S. Matsui and J. Sone},
  journal={1997 55th Annual Device Research Conference Digest},
  year={1997},
  pages={14-15}
}
Discusses fabrication of electrically variable shallow junction MOSFETs (EJ-MOSFETs) to investigate transistor characteristics in ultra-fine gate MOSFETs. By using electron beam (EB) lithography and an ultra-high resolution resist (Calixarene), we could achieve a gate length of 30 nm for the first time. Since the short-channel effects are effectively suppressed by electrically induced ultra-shallow source/drain regions in the structure, the fabricated device exhibited normal transistor… Expand
1 Citations

Figures from this paper

A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain
In this paper, we present the unique features exhibited by a novel double gate MOSFET in which the front gate consists of two side gates as an extension of the source/drain. The asymmetrical sideExpand

References

SHOWING 1-3 OF 3 REFERENCES
Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions
Forty-nanometer gate length n-MOSFETs with ultra-shallow source and drain junctions of around 10 nm are fabricated for the first time. To achieve such shallow junctions, a technique of solid-phaseExpand
Threshold voltage controlled 0.1-/spl mu/m MOSFET utilizing inversion layer as extreme shallow source/drain
MOSFETs containing sub-gates as sidewall spacers of the main gate are fabricated. The inversion layers induced in these MOSFETs by the sub-gates are used as source and drain, in order to investigateExpand
Accurate nano-EB lithography for 40-nm gate MOSFETs
Nanometer electron beam lithography has been used for fabrication of sub-0.1 μm MOSFETs. Chemically amplified resist as a single layer mask showed high resolution by optimizing the resist process.Expand